Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application.

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Bibliographic Details
Title: Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application.
Authors: Fang, Shi1, Li, Liuan1, Wang, Danhao1, Chen, Wei1, Kang, Yang1, Wang, Weiyi2, Liu, Xin1, Luo, Yuanmin1, Yu, Huabin1, Zhang, Haochen1, Memon, Muhammad Hunain1, Hu, Wei2, He, Jr‐Hau3, Gong, Chen1,4, Zuo, Chengjie1,4, Liu, Sheng5, Sun, Haiding1,4, haiding@ustc.edu.cn
Source: Advanced Functional Materials; 9/12/2023, Vol. 33 Issue 37, p1-11, 11p
Database: Applied Science & Technology Source
Description
ISSN:1616301X
DOI:10.1002/adfm.202214408