View in EDS PDF Full Text

Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS.

Saved in:
Bibliographic Details
Title: Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS.
Authors: Cao, Jun1, Li, Tianshu2, Gao, Hongze1, Cong, Xin3, Lin, Miao-Ling3, Russo, Nicholas4, Luo, Weijun1, Ding, Siyuan5, Wang, Zifan1, Smith, Kevin E.4, Tan, Ping-Heng3, Ma, Qiong5, Ling, Xi1,2,6, xiling@bu.edu
Source: Journal of Electronic Materials; Nov2023, Vol. 52 Issue 11, p7554-7565, 12p
Database: Applied Science & Technology Source
Description
ISSN:03615235
DOI:10.1007/s11664-023-10670-w