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Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS.

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Title: Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS.
Authors: Cao, Jun1, Li, Tianshu2, Gao, Hongze1, Cong, Xin3, Lin, Miao-Ling3, Russo, Nicholas4, Luo, Weijun1, Ding, Siyuan5, Wang, Zifan1, Smith, Kevin E.4, Tan, Ping-Heng3, Ma, Qiong5, Ling, Xi1,2,6, xiling@bu.edu
Source: Journal of Electronic Materials; Nov2023, Vol. 52 Issue 11, p7554-7565, 12p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 172843599
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS.
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      – Type: doi
        Value: 10.1007/s11664-023-10670-w
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      – Code: eng
        Text: English
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            NameFull: Cao, Jun
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            NameFull: Li, Tianshu
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            – D: 01
              M: 11
              Text: Nov2023
              Type: published
              Y: 2023
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