Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer.

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Bibliographic Details
Title: Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer.
Authors: Greco, G.1, Di Franco, S.1, Lo Nigro, R.1, Bongiorno, C.1, Spera, M.2, Badalà, P.2, Iucolano, F.2, Roccaforte, F.1, fabrizio.roccaforte@imm.cnr.it
Source: Applied Physics Letters; Jan2024, Vol. 124 Issue 1, p1-6, 6p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0180862