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Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer.

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Title: Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer.
Authors: Greco, G.1, Di Franco, S.1, Lo Nigro, R.1, Bongiorno, C.1, Spera, M.2, Badalà, P.2, Iucolano, F.2, Roccaforte, F.1, fabrizio.roccaforte@imm.cnr.it
Source: Applied Physics Letters; Jan2024, Vol. 124 Issue 1, p1-6, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 174636863
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=174636863
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    Identifiers:
      – Type: doi
        Value: 10.1063/5.0180862
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer.
        Type: main
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            NameFull: Greco, G.
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            NameFull: Di Franco, S.
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            NameFull: Lo Nigro, R.
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            NameFull: Bongiorno, C.
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            NameFull: Spera, M.
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            NameFull: Badalà, P.
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            NameFull: Iucolano, F.
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            – D: 01
              M: 01
              Text: Jan2024
              Type: published
              Y: 2024
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              Value: 124
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            – TitleFull: Applied Physics Letters
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