View in EDS HTML Full Text PDF Full Text

Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE.

Saved in:
Bibliographic Details
Title: Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE.
Authors: Mi, Wei1, Li, Bingkun1, Chen, Rongrong2, Luan, Caina2, Wang, Di1, 18253164706@163.com, He, Lin’an1, Zhou, Liwei1, Zhao, Jinshi1, jinshi58@163.com
Source: Journal of Materials Science: Materials in Electronics; Jan2024, Vol. 35 Issue 3, p1-11, 11p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:09574522
DOI:10.1007/s10854-024-11966-1