View in EDS HTML Full Text PDF Full Text

Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE.

Saved in:
Bibliographic Details
Title: Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE.
Authors: Mi, Wei1, Li, Bingkun1, Chen, Rongrong2, Luan, Caina2, Wang, Di1, 18253164706@163.com, He, Lin’an1, Zhou, Liwei1, Zhao, Jinshi1, jinshi58@163.com
Source: Journal of Materials Science: Materials in Electronics; Jan2024, Vol. 35 Issue 3, p1-11, 11p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 175315930
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Mi%2C+Wei%22">Mi, Wei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Bingkun%22">Li, Bingkun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Rongrong%22">Chen, Rongrong</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Luan%2C+Caina%22">Luan, Caina</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Di%22">Wang, Di</searchLink><relatesTo>1</relatesTo>, <i>18253164706@163.com</i><br /><searchLink fieldCode="AU" term="%22He%2C+Lin%27an%22">He, Lin’an</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhou%2C+Liwei%22">Zhou, Liwei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhao%2C+Jinshi%22">Zhao, Jinshi</searchLink><relatesTo>1</relatesTo>, <i>jinshi58@163.com</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2024, Vol. 35 Issue 3, p1-11, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=175315930
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-024-11966-1
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 1
    Titles:
      – TitleFull: Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Mi, Wei
      – PersonEntity:
          Name:
            NameFull: Li, Bingkun
      – PersonEntity:
          Name:
            NameFull: Chen, Rongrong
      – PersonEntity:
          Name:
            NameFull: Luan, Caina
      – PersonEntity:
          Name:
            NameFull: Wang, Di
      – PersonEntity:
          Name:
            NameFull: He, Lin’an
      – PersonEntity:
          Name:
            NameFull: Zhou, Liwei
      – PersonEntity:
          Name:
            NameFull: Zhao, Jinshi
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 01
              Text: Jan2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1