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Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films.

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Bibliographic Details
Title: Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films.
Authors: Kim, Minsoo1, Son, Jong Yeog1, jyson@khu.ac.kr
Source: Journal of Materials Science; Feb2024, Vol. 59 Issue 7, p2988-2997, 10p
Database: Applied Science & Technology Source
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ISSN:00222461
DOI:10.1007/s10853-024-09439-1