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Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories.

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Bibliographic Details
Title: Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories.
Authors: Belmoubarik, Mohamed1,2, mohamed.belmoubarik@um6p.ma, Al-Mahdawi, Muftah2, Machado Jr., George3, Nozaki, Tomohiro2, Coelho, Cláudia3, Sahashi, Masashi2, Peng, Weng Kung3,4
Source: Journal of Materials Science: Materials in Electronics; Mar2024, Vol. 35 Issue 7, p1-17, 17p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-024-12195-2