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Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories.

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Title: Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories.
Authors: Belmoubarik, Mohamed1,2, mohamed.belmoubarik@um6p.ma, Al-Mahdawi, Muftah2, Machado Jr., George3, Nozaki, Tomohiro2, Coelho, Cláudia3, Sahashi, Masashi2, Peng, Weng Kung3,4
Source: Journal of Materials Science: Materials in Electronics; Mar2024, Vol. 35 Issue 7, p1-17, 17p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 176282677
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Mar2024, Vol. 35 Issue 7, p1-17, 17p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-024-12195-2
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      – Code: eng
        Text: English
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        PageCount: 17
        StartPage: 1
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      – TitleFull: Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories.
        Type: main
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          Name:
            NameFull: Belmoubarik, Mohamed
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            NameFull: Al-Mahdawi, Muftah
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            NameFull: Machado Jr., George
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            NameFull: Nozaki, Tomohiro
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            NameFull: Coelho, Cláudia
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            NameFull: Sahashi, Masashi
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            NameFull: Peng, Weng Kung
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          Dates:
            – D: 01
              M: 03
              Text: Mar2024
              Type: published
              Y: 2024
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              Value: 35
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              Value: 7
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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