Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates.

Saved in:
Bibliographic Details
Title: Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates.
Authors: Chuang, Tung-Han1,2, tunghan@ntu.edu.tw, Lin, Ang-Ying1,3, Chen, Yen-Ting1, Chen, Yin-Hsuan1, Yang, Zi-Hong1, Wu, Po-Ching1,4
Source: Journal of Electronic Materials; May2024, Vol. 53 Issue 5, p2583-2590, 8p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:03615235
DOI:10.1007/s11664-023-10905-w