APA (7th ed.) Citation

Chuang, T., Lin, A., Chen, Y., Chen, Y., Yang, Z., & Wu, P. (2024). Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates. Journal of Electronic Materials, 53(5), 2583. https://doi.org/10.1007/s11664-023-10905-w

Chicago Style (17th ed.) Citation

Chuang, Tung-Han, Ang-Ying Lin, Yen-Ting Chen, Yin-Hsuan Chen, Zi-Hong Yang, and Po-Ching Wu. "Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates." Journal of Electronic Materials 53, no. 5 (2024): 2583. https://doi.org/10.1007/s11664-023-10905-w.

MLA (9th ed.) Citation

Chuang, Tung-Han, et al. "Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates." Journal of Electronic Materials, vol. 53, no. 5, 2024, p. 2583, https://doi.org/10.1007/s11664-023-10905-w.