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Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates.

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Title: Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates.
Authors: Chuang, Tung-Han1,2, tunghan@ntu.edu.tw, Lin, Ang-Ying1,3, Chen, Yen-Ting1, Chen, Yin-Hsuan1, Yang, Zi-Hong1, Wu, Po-Ching1,4
Source: Journal of Electronic Materials; May2024, Vol. 53 Issue 5, p2583-2590, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 176353871
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PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates.
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      – Type: doi
        Value: 10.1007/s11664-023-10905-w
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 2583
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      – TitleFull: Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates.
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            NameFull: Chuang, Tung-Han
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            NameFull: Lin, Ang-Ying
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            NameFull: Chen, Yin-Hsuan
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            – D: 01
              M: 05
              Text: May2024
              Type: published
              Y: 2024
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