Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources.

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Bibliographic Details
Title: Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources.
Authors: Lee, Seungbin1, Jung, Yong Chan2, Park, Hye Ryeon3, Park, Seongbin1, Kang, Jongmug3, Jeong, Juntak3, Choi, Yeseo1, Kim, Jin-Hyun2, Mohan, Jaidah2, Kim, Harrison Sejoon2, Kim, Jiyoung1,2, jiyoung.kim@utdallas.edu, Kim, Si Joon1,3, sijoon.kim@kangwon.ac.kr
Source: Solid-State Electronics; Jun2024, Vol. 216, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
Description
ISSN:00381101
DOI:10.1016/j.sse.2024.108911