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Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources.

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Title: Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources.
Authors: Lee, Seungbin1, Jung, Yong Chan2, Park, Hye Ryeon3, Park, Seongbin1, Kang, Jongmug3, Jeong, Juntak3, Choi, Yeseo1, Kim, Jin-Hyun2, Mohan, Jaidah2, Kim, Harrison Sejoon2, Kim, Jiyoung1,2, jiyoung.kim@utdallas.edu, Kim, Si Joon1,3, sijoon.kim@kangwon.ac.kr
Source: Solid-State Electronics; Jun2024, Vol. 216, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 176809766
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; Jun2024, Vol. 216, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=176809766
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.sse.2024.108911
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      – Code: eng
        Text: English
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      – TitleFull: Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources.
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            NameFull: Lee, Seungbin
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            NameFull: Jung, Yong Chan
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            – D: 01
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
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              Value: 00381101
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              Value: 216
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