Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K.

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Bibliographic Details
Title: Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K.
Authors: Chen, Yayi1, Liu, Xingji1, Liu, Yuan1, eeliuyuan@gdut.edu.cn, Chen, Rongsheng2, Zhang, Jianfeng1, Wu, Mingchao1, Kwok, Hoi-Sing3, Zhong, Wei1, zwnice@163.com
Source: Applied Physics Letters; 4/22/2024, Vol. 124 Issue 17, p1-6, 6p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0204316