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Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.

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Bibliographic Details
Title:	Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.
Authors:	Cho, Young-Hun¹, Chung, Seung-Hwan¹, Park, Se-Rim¹, Choi, Ji-Soo¹, Moon, Soo-Young¹, Lee, Hyung-Jin¹, Lee, Geon-Hee¹, Koo, Sang-Mo¹, smkoo@kw.ac.kr
Source:	Journal of Materials Science: Materials in Electronics; May2024, Vol. 35 Issue 14, p1-8, 8p
Database:	Applied Science & Technology Source
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Description
ISSN:	09574522
DOI:	10.1007/s10854-024-12551-2