The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.

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Bibliographic Details
Title: The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
Authors: Wangila, Emmanuel1,2, cjgunder@uark.edueswangil@uark.edu, Gunder, Calbi1,2, fmaiade@uark.edu, Lytvyn, Petro M.3, plyt@isp.kiev.ua, Zamani-Alavijeh, Mohammad4, mzamania@uark.edu, Maia de Oliveira, Fernando1, skryvyi@uark.edu, Kryvyi, Serhii1, hstanchu@uark.edu, Stanchu, Hryhorii1, ymazur@uark.edu, Sheibani, Aida4, asheiban@uark.edu, Mazur, Yuriy I.1, salamo@uark.edu, Yu, Shui-Qing5, syu@uark.edu, Salamo, Gregory1,2,4
Source: Crystals (2073-4352); May2024, Vol. 14 Issue 5, p414, 14p
Database: Applied Science & Technology Source
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ISSN:20734352
DOI:10.3390/cryst14050414