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Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact.

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Bibliographic Details
Title: Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact.
Authors: Cherroun, Rima1, Meftah, Afak1, af.meftah@univ-biskra.dz, Sengouga, Nouredine1, Labed, Madani2, Kim, Hojoong2, Rim, You Seung2,3, Djemaa, Attafi1, Meftah, Amjad1
Source: Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 16, p1-19, 19p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-024-12786-z