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Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact.

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Title: Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact.
Authors: Cherroun, Rima1, Meftah, Afak1, af.meftah@univ-biskra.dz, Sengouga, Nouredine1, Labed, Madani2, Kim, Hojoong2, Rim, You Seung2,3, Djemaa, Attafi1, Meftah, Amjad1
Source: Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 16, p1-19, 19p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 177598207
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jun2024, Vol. 35 Issue 16, p1-19, 19p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=177598207
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-024-12786-z
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      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 19
        StartPage: 1
    Titles:
      – TitleFull: Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact.
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            NameFull: Cherroun, Rima
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            NameFull: Meftah, Afak
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            NameFull: Sengouga, Nouredine
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            NameFull: Labed, Madani
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            NameFull: Kim, Hojoong
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            NameFull: Rim, You Seung
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            NameFull: Djemaa, Attafi
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            NameFull: Meftah, Amjad
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          Dates:
            – D: 01
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
          Identifiers:
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              Value: 35
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              Value: 16
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
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