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High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

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Bibliographic Details
Title: High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.
Authors: Das, Partha1, pd@eced.svnit.ac.in
Source: Journal of Electronic Materials; Jul2024, Vol. 53 Issue 7, p3415-3425, 11p
Database: Applied Science & Technology Source
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Description
ISSN:03615235
DOI:10.1007/s11664-024-11074-0