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Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.

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Bibliographic Details
Title:	Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.
Authors:	Öztel, Halim Onur¹, Akçay, Namık², namikakcay@gmail.com, Algün, Gökhan²
Source:	Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 18, p1-16, 16p
Database:	Applied Science & Technology Source
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Description
ISSN:	09574522
DOI:	10.1007/s10854-024-13020-6