APA (7th ed.) Citation

Öztel, H. O., Akçay, N., & Algün, G. (2024). Deep-level transient spectroscopy analysis of interface defects in Ce: ZnO/p-Si heterostructures. Journal of Materials Science: Materials in Electronics, 35(18), 1. https://doi.org/10.1007/s10854-024-13020-6

Chicago Style (17th ed.) Citation

Öztel, Halim Onur, Namık Akçay, and Gökhan Algün. "Deep-level Transient Spectroscopy Analysis of Interface Defects in Ce: ZnO/p-Si Heterostructures." Journal of Materials Science: Materials in Electronics 35, no. 18 (2024): 1. https://doi.org/10.1007/s10854-024-13020-6.

MLA (9th ed.) Citation

Öztel, Halim Onur, et al. "Deep-level Transient Spectroscopy Analysis of Interface Defects in Ce: ZnO/p-Si Heterostructures." Journal of Materials Science: Materials in Electronics, vol. 35, no. 18, 2024, p. 1, https://doi.org/10.1007/s10854-024-13020-6.