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Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.

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Title: Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.
Authors: Öztel, Halim Onur1, Akçay, Namık2, namikakcay@gmail.com, Algün, Gökhan2
Source: Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 18, p1-16, 16p
Database: Applied Science & Technology Source
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  Data: Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.
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  Data: <searchLink fieldCode="AU" term="%22Öztel%2C+Halim+Onur%22">Öztel, Halim Onur</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Akçay%2C+Namık%22">Akçay, Namık</searchLink><relatesTo>2</relatesTo>, <i>namikakcay@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Algün%2C+Gökhan%22">Algün, Gökhan</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jun2024, Vol. 35 Issue 18, p1-16, 16p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-024-13020-6
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      – Code: eng
        Text: English
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        PageCount: 16
        StartPage: 1
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      – TitleFull: Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.
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            NameFull: Öztel, Halim Onur
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            NameFull: Akçay, Namık
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            NameFull: Algün, Gökhan
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            – D: 21
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
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              Value: 35
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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