Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.

Saved in:
Bibliographic Details
Title: Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures.
Authors: Öztel, Halim Onur1, Akçay, Namık2, namikakcay@gmail.com, Algün, Gökhan2
Source: Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 18, p1-16, 16p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Be the first to leave a comment!
You must be logged in first