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Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.

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Bibliographic Details
Title: Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.
Authors: Behera, Makhes K.1, mkbehera@nsu.edu, Yarbrough, Kelsea A.1, Bahoura, Messaoud1,2
Source: Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 19, p1-11, 11p
Database: Applied Science & Technology Source
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Description
ISSN:09574522
DOI:10.1007/s10854-024-13031-3