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Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.

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Title: Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.
Authors: Behera, Makhes K.1, mkbehera@nsu.edu, Yarbrough, Kelsea A.1, Bahoura, Messaoud1,2
Source: Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 19, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 178495974
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Behera%2C+Makhes+K%2E%22">Behera, Makhes K.</searchLink><relatesTo>1</relatesTo>, <i>mkbehera@nsu.edu</i><br /><searchLink fieldCode="AU" term="%22Yarbrough%2C+Kelsea+A%2E%22">Yarbrough, Kelsea A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Bahoura%2C+Messaoud%22">Bahoura, Messaoud</searchLink><relatesTo>1,2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jul2024, Vol. 35 Issue 19, p1-11, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=178495974
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-024-13031-3
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 1
    Titles:
      – TitleFull: Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Behera, Makhes K.
      – PersonEntity:
          Name:
            NameFull: Yarbrough, Kelsea A.
      – PersonEntity:
          Name:
            NameFull: Bahoura, Messaoud
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 19
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1