Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy.
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| Title: | Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy. |
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| Authors: | Kumaran, V. N. Senthil1, Venkatesh, M.2, Mubarakali, Azath3, Alqahtani, Abdulrahman Saad4, Parthasarathy, P.2, arjunsarathii@gmail.com |
| Source: | Journal of Materials Science: Materials in Electronics; Sep2024, Vol. 35 Issue 26, p1-21, 21p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-024-13430-6 |
