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Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy.

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Title: Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy.
Authors: Kumaran, V. N. Senthil1, Venkatesh, M.2, Mubarakali, Azath3, Alqahtani, Abdulrahman Saad4, Parthasarathy, P.2, arjunsarathii@gmail.com
Source: Journal of Materials Science: Materials in Electronics; Sep2024, Vol. 35 Issue 26, p1-21, 21p
Database: Applied Science & Technology Source
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  Data: Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Sep2024, Vol. 35 Issue 26, p1-21, 21p
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        Value: 10.1007/s10854-024-13430-6
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        Text: English
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      – TitleFull: Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy.
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            NameFull: Kumaran, V. N. Senthil
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            NameFull: Alqahtani, Abdulrahman Saad
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              M: 09
              Text: Sep2024
              Type: published
              Y: 2024
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