Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon.
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| Title: | Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon. |
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| Authors: | Mohammed, Alghareeb Abbas Abdulhussein1,2, Lim, Way Foong1, way_foong@usm.my |
| Source: | Journal of Materials Science: Materials in Electronics; Sep2024, Vol. 35 Issue 26, p1-20, 20p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-024-13488-2 |
