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A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS.

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Title: A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS.
Authors: Sánchez-Castro, Angel D.1, angel.sanchez@cinvestav.mx, Kudriavtsev, Yuriy1, Rivera-Álvarez, Zacarías2
Source: Journal of Materials Science: Materials in Electronics; Oct2024, Vol. 35 Issue 28, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 180141385
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Oct2024, Vol. 35 Issue 28, p1-10, 10p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-024-13612-2
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      – Code: eng
        Text: English
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        PageCount: 10
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      – TitleFull: A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS.
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            NameFull: Sánchez-Castro, Angel D.
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            NameFull: Kudriavtsev, Yuriy
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            NameFull: Rivera-Álvarez, Zacarías
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            – D: 01
              M: 10
              Text: Oct2024
              Type: published
              Y: 2024
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              Value: 35
            – Type: issue
              Value: 28
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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