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Design of Ga2O3 trench gate MOSFET devices with dielectric pillars.

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Bibliographic Details
Title:	Design of Ga2O3 trench gate MOSFET devices with dielectric pillars.
Authors:	Zhao, Tianle¹, Azad, Fahad², Jia, Yanrun³, Zhang, Hanzhe¹, Yang, Chunyang¹, Su, Shichen^1,4, shichensu@126.com
Source:	Semiconductor Science & Technology; Jan2025, Vol. 40 Issue 1, p1-9, 9p
Database:	Applied Science & Technology Source

Description
ISSN:	02681242
DOI:	10.1088/1361-6641/ad904b