APA (7th ed.) Citation

Zhao, T., Azad, F., Jia, Y., Zhang, H., Yang, C., & Su, S. (2025). Design of Ga2O3 trench gate MOSFET devices with dielectric pillars. Semiconductor Science & Technology, 40(1), 1. https://doi.org/10.1088/1361-6641/ad904b

Chicago Style (17th ed.) Citation

Zhao, Tianle, Fahad Azad, Yanrun Jia, Hanzhe Zhang, Chunyang Yang, and Shichen Su. "Design of Ga2O3 Trench Gate MOSFET Devices with Dielectric Pillars." Semiconductor Science & Technology 40, no. 1 (2025): 1. https://doi.org/10.1088/1361-6641/ad904b.

MLA (9th ed.) Citation

Zhao, Tianle, et al. "Design of Ga2O3 Trench Gate MOSFET Devices with Dielectric Pillars." Semiconductor Science & Technology, vol. 40, no. 1, 2025, p. 1, https://doi.org/10.1088/1361-6641/ad904b.