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Design of Ga2O3 trench gate MOSFET devices with dielectric pillars.

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Title: Design of Ga2O3 trench gate MOSFET devices with dielectric pillars.
Authors: Zhao, Tianle1, Azad, Fahad2, Jia, Yanrun3, Zhang, Hanzhe1, Yang, Chunyang1, Su, Shichen1,4, shichensu@126.com
Source: Semiconductor Science & Technology; Jan2025, Vol. 40 Issue 1, p1-9, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 181231077
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=181231077
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      – Type: doi
        Value: 10.1088/1361-6641/ad904b
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      – Code: eng
        Text: English
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      – TitleFull: Design of Ga2O3 trench gate MOSFET devices with dielectric pillars.
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            NameFull: Zhao, Tianle
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            NameFull: Azad, Fahad
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            NameFull: Jia, Yanrun
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              Text: Jan2025
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              Y: 2025
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