Characterisation of 3D trench silicon pixel sensors irradiated at 1 ⋅1017 1 MeV neq cm-2.
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| Title: | Characterisation of 3D trench silicon pixel sensors irradiated at 1 ⋅1017 1 MeV neq cm-2. |
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| Authors: | Addison, M.1, Bellora, A.2,3, Borgato, F.4,5, Brundu, D.6,7, Cardini, A.6, Cossu, G. M.6, Dalla Betta, G. F.8,9, La Delfa, L.6, Lai, A.6, Lampis, A.6, andrea.lampis@ca.infn.it, Loi, A.6, Obertino, M. M.2,3, Vecchi, S.10, Verdoglia, M.5,6 |
| Source: | Frontiers in Physics; 2024, p1-12, 12p |
| Database: | Applied Science & Technology Source |
| ISSN: | 2296424X |
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| DOI: | 10.3389/fphy.2024.1497267 |
