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Characterisation of 3D trench silicon pixel sensors irradiated at 1 ⋅1017 1 MeV neq cm-2.

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Title: Characterisation of 3D trench silicon pixel sensors irradiated at 1 ⋅1017 1 MeV neq cm-2.
Authors: Addison, M.1, Bellora, A.2,3, Borgato, F.4,5, Brundu, D.6,7, Cardini, A.6, Cossu, G. M.6, Dalla Betta, G. F.8,9, La Delfa, L.6, Lai, A.6, Lampis, A.6, andrea.lampis@ca.infn.it, Loi, A.6, Obertino, M. M.2,3, Vecchi, S.10, Verdoglia, M.5,6
Source: Frontiers in Physics; 2024, p1-12, 12p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 181275039
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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        Value: 10.3389/fphy.2024.1497267
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        Text: English
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