A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS.
Saved in:
| Title: | A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS. |
|---|---|
| Authors: | Shen, Haoyu1,2, shenhaoyu@ime.ac.cn, Wu, Bin1,3, shenhaoyu@ime.ac.cn |
| Source: | Applied Sciences (2076-3417); Dec2024, Vol. 14 Issue 23, p10768, 19p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| ISSN: | 20763417 |
|---|---|
| DOI: | 10.3390/app142310768 |