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A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS.

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Title: A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS.
Authors: Shen, Haoyu1,2, shenhaoyu@ime.ac.cn, Wu, Bin1,3, shenhaoyu@ime.ac.cn
Source: Applied Sciences (2076-3417); Dec2024, Vol. 14 Issue 23, p10768, 19p
Database: Applied Science & Technology Source
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  Data: A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS.
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        Value: 10.3390/app142310768
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      – Code: eng
        Text: English
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        PageCount: 19
        StartPage: 10768
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      – TitleFull: A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS.
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            NameFull: Shen, Haoyu
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            NameFull: Wu, Bin
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              M: 12
              Text: Dec2024
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              Y: 2024
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