A study of UIS ruggedness of mismatched paralleled SiC MOSFETs.

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Bibliographic Details
Title: A study of UIS ruggedness of mismatched paralleled SiC MOSFETs.
Authors: Scognamillo, C.1, Catalano, A.P.1, antoniopio.catalano@unina.it, Codecasa, L.2, Castellazzi, A.3, d'Alessandro, V.1
Source: Microelectronics Reliability; Jan2025, Vol. 164, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
Description
ISSN:00262714
DOI:10.1016/j.microrel.2024.115571