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A study of UIS ruggedness of mismatched paralleled SiC MOSFETs.

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Title: A study of UIS ruggedness of mismatched paralleled SiC MOSFETs.
Authors: Scognamillo, C.1, Catalano, A.P.1, antoniopio.catalano@unina.it, Codecasa, L.2, Castellazzi, A.3, d'Alessandro, V.1
Source: Microelectronics Reliability; Jan2025, Vol. 164, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 181865957
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=181865957
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.microrel.2024.115571
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      – Code: eng
        Text: English
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              Text: Jan2025
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              Y: 2025
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