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Analyses of the Properties of the NiO-Doped Ga 2 O 3 Wide-Bandgap Semiconductor Thin Films.

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Bibliographic Details
Title: Analyses of the Properties of the NiO-Doped Ga 2 O 3 Wide-Bandgap Semiconductor Thin Films.
Authors: Yang, Cheng-Fu1,2, cfyang@nuk.edu.tw, Tsao, En-Chi1, a1097135@mail.nuk.edu.tw, Wang, Yi-Wen1, m1125618@mail.nuk.edu.tw, Lin, Hsin-Pei1, a1115647@mail.nuk.edu.tw, Meen, Teen-Hang3, thmeen@gs.nfu.edu.tw, Liao, Shu-Han4, thmeen@gs.nfu.edu.tw
Source: Coatings (2079-6412); Dec2024, Vol. 14 Issue 12, p1615, 16p
Database: Applied Science & Technology Source
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ISSN:20796412
DOI:10.3390/coatings14121615