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Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics.

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Title: Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics.
Authors: Kumar, Mohit1, mohit.kumar@cea.frrene.escoffier@cea.fr, Xu, Laurent1, Labau, Timothée1,2, Biscarrat, Jérôme1, Torrengo, Simona1, Charles, Matthew1, Lecouvey, Christophe1, Olivier, Aurélien1, Zgheib, Joelle1, Escoffier, René1, Buckley, Julien1, mohit.kumar@cea.fr
Source: Crystals (2073-4352); Jan2025, Vol. 15 Issue 1, p56, 12p
Database: Applied Science & Technology Source
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ISSN:20734352
DOI:10.3390/cryst15010056