Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance.
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| Title: | Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance. |
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| Authors: | Guo, Yun-Duo1,2, Wang, An-Feng1,2, Huang, Qi-Min1,2, Wang, Zhen-Yu1,2, Ma, Hong-Ping1,2,3, hpma@fudan.edu.cn, Zhang, Qing-Chun1,2,3 |
| Source: | Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 3, p1-16, 16p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-025-14273-5 |
