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Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance.

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Title: Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance.
Authors: Guo, Yun-Duo1,2, Wang, An-Feng1,2, Huang, Qi-Min1,2, Wang, Zhen-Yu1,2, Ma, Hong-Ping1,2,3, hpma@fudan.edu.cn, Zhang, Qing-Chun1,2,3
Source: Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 3, p1-16, 16p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 182460101
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2025, Vol. 36 Issue 3, p1-16, 16p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-025-14273-5
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      – Code: eng
        Text: English
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        PageCount: 16
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      – TitleFull: Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance.
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            NameFull: Guo, Yun-Duo
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            NameFull: Wang, An-Feng
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            NameFull: Huang, Qi-Min
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            NameFull: Wang, Zhen-Yu
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            NameFull: Ma, Hong-Ping
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            – D: 21
              M: 01
              Text: Jan2025
              Type: published
              Y: 2025
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              Value: 36
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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