13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD.

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Bibliographic Details
Title: 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD.
Authors: Brown, Richard1, Liu, Chen1,2, Seager, George3, Alvarado, Francisco4, Wong, Ka Ming1, Craig, Adam P.3, Beanland, Richard4, Marshall, Andrew R. J.3, Davies, J. Iwan2, Li, Qiang1, LiQ44@cardiff.ac.uk
Source: APL Photonics; Jan2025, Vol. 10 Issue 1, p1-8, 8p
Database: Applied Science & Technology Source
Description
ISSN:23780967
DOI:10.1063/5.0231448