Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications.
Saved in:
| Title: | Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications. |
|---|---|
| Authors: | Kim, Min Seok1, Lee, Sang Ho1, Park, Jin1, Bae, Seung Ji1, Hong, Jeong Woo1, Koh, Won Suk1, Yun, Gang San1, Jang, Jaewon1, Bae, Jin-Hyuk1, Kang, In Man1, imkang@ee.knu.ac.kr |
| Source: | Discover Nano; 2/10/2025, Vol. 20 Issue 1, p1-11, 11p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!
