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Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications.

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Bibliographic Details
Title: Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications.
Authors: Kossar, Shahnaz1, shazia.rajput0505@gmail.com, Rasool, Asif2, asifrasool856@gmail.com, Khan, Rajwali3, rajwali@uaeu.ac.ae, Amiruddin, R.4, Koser, Kulsoom5, Bhat, Aadil Ahmad6
Source: Journal of Materials Science: Materials in Electronics; Apr2025, Vol. 36 Issue 10, p1-13, 13p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-025-14639-9