View in EDS HTML Full Text PDF Full Text

Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications.

Saved in:
Bibliographic Details
Title: Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications.
Authors: Kossar, Shahnaz1, shazia.rajput0505@gmail.com, Rasool, Asif2, asifrasool856@gmail.com, Khan, Rajwali3, rajwali@uaeu.ac.ae, Amiruddin, R.4, Koser, Kulsoom5, Bhat, Aadil Ahmad6
Source: Journal of Materials Science: Materials in Electronics; Apr2025, Vol. 36 Issue 10, p1-13, 13p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 184614503
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kossar%2C+Shahnaz%22">Kossar, Shahnaz</searchLink><relatesTo>1</relatesTo>, <i>shazia.rajput0505@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Rasool%2C+Asif%22">Rasool, Asif</searchLink><relatesTo>2</relatesTo>, <i>asifrasool856@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Khan%2C+Rajwali%22">Khan, Rajwali</searchLink><relatesTo>3</relatesTo>, <i>rajwali@uaeu.ac.ae</i><br /><searchLink fieldCode="AU" term="%22Amiruddin%2C+R%2E%22">Amiruddin, R.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Koser%2C+Kulsoom%22">Koser, Kulsoom</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Bhat%2C+Aadil+Ahmad%22">Bhat, Aadil Ahmad</searchLink><relatesTo>6</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Apr2025, Vol. 36 Issue 10, p1-13, 13p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=184614503
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-025-14639-9
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 13
        StartPage: 1
    Titles:
      – TitleFull: Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kossar, Shahnaz
      – PersonEntity:
          Name:
            NameFull: Rasool, Asif
      – PersonEntity:
          Name:
            NameFull: Khan, Rajwali
      – PersonEntity:
          Name:
            NameFull: Amiruddin, R.
      – PersonEntity:
          Name:
            NameFull: Koser, Kulsoom
      – PersonEntity:
          Name:
            NameFull: Bhat, Aadil Ahmad
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 36
            – Type: issue
              Value: 10
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1