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Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer.

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Bibliographic Details
Title: Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer.
Authors: Wu, Fa1,2, Li, Hao2, Cui, Wei3, Liu, Guangyin1, Zhang, Lun2, Feng, Yang2, Yang, Saiyu1, Tang, Qin1, Wang, Pan2, Shen, Jun1, shenjun@cqu.edu.cn, Tang, Zhaohuan2, zhaohuan.tang@cumec.cn
Source: Journal of Materials Science: Materials in Electronics; Apr2025, Vol. 36 Issue 10, p1-12, 12p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-025-14662-w