Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer.
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| Title: | Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer. |
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| Authors: | Wu, Fa1,2, Li, Hao2, Cui, Wei3, Liu, Guangyin1, Zhang, Lun2, Feng, Yang2, Yang, Saiyu1, Tang, Qin1, Wang, Pan2, Shen, Jun1, shenjun@cqu.edu.cn, Tang, Zhaohuan2, zhaohuan.tang@cumec.cn |
| Source: | Journal of Materials Science: Materials in Electronics; Apr2025, Vol. 36 Issue 10, p1-12, 12p |
| Database: | Applied Science & Technology Source |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 184614513 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Wu%2C+Fa%22">Wu, Fa</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Hao%22">Li, Hao</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Cui%2C+Wei%22">Cui, Wei</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Guangyin%22">Liu, Guangyin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Lun%22">Zhang, Lun</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Feng%2C+Yang%22">Feng, Yang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Saiyu%22">Yang, Saiyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Qin%22">Tang, Qin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Pan%22">Wang, Pan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Shen%2C+Jun%22">Shen, Jun</searchLink><relatesTo>1</relatesTo>, <i>shenjun@cqu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Tang%2C+Zhaohuan%22">Tang, Zhaohuan</searchLink><relatesTo>2</relatesTo>, <i>zhaohuan.tang@cumec.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Apr2025, Vol. 36 Issue 10, p1-12, 12p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=184614513 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-025-14662-w Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 1 Titles: – TitleFull: Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Wu, Fa – PersonEntity: Name: NameFull: Li, Hao – PersonEntity: Name: NameFull: Cui, Wei – PersonEntity: Name: NameFull: Liu, Guangyin – PersonEntity: Name: NameFull: Zhang, Lun – PersonEntity: Name: NameFull: Feng, Yang – PersonEntity: Name: NameFull: Yang, Saiyu – PersonEntity: Name: NameFull: Tang, Qin – PersonEntity: Name: NameFull: Wang, Pan – PersonEntity: Name: NameFull: Shen, Jun – PersonEntity: Name: NameFull: Tang, Zhaohuan IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 36 – Type: issue Value: 10 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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